Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 17.0 A
Technical parameters/drain source resistance: 70.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 45.0 W
Technical parameters/product series: IRFZ24N
Technical parameters/drain source voltage (Vds): 55.0 V
Technical parameters/leakage source breakdown voltage: 55.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 17.0 A
Technical parameters/rise time: 34 ns
Technical parameters/Input capacitance (Ciss): 370pF @25V(Vds)
Technical parameters/descent time: 27 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 45000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Push-Pull, Full-Bridge, Consumer Full-Bridge
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z34NPBF
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IFA | 功能相似 |
P 通道功率 MOSFET 超过 8A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRFR024NTRPBF
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International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR024NTRPBF 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V
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