Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 20A
Technical parameters/rise time: 100 ns
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/descent time: 52 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 42000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIZ34GPBF
|
VISHAY | 类似代替 | TO-220-3 |
MOSFET N-CH 60V 20A TO220FP
|
||
IRFIZ34GPBF
|
International Rectifier | 类似代替 | Through Hole |
MOSFET N-CH 60V 20A TO220FP
|
||
IRFIZ34GPBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 60V 20A TO220FP
|
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