Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Delete 동업체: Vishay
Other/Delete 품카테 High speed: MOSFETs
Other/Delete: General Purpose MOSFETs
Other/궟동: Single
Other/Case/Package: TO-220
Other/Soft 랜イ동터극동: N-Channel
Other/ハ레イ?동항복압: 900 V
Other/Link Files 레イ류: 1.2 A
Other/력발산: 30000 mW
Other/저항 Drain Source RDS (on): 8 Ohm @ 10 V
Other/Typical 하강: 32 ns
Other/Typical 상승: 21 ns
Other/표준오프い Contact Us: 56 ns
Other/ị동: TUBE
Other/게イSoft - ?동항복압: 20 V
Other/동대작동온도: 150 C
Other/π소작동온도: 55 C
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFIBF20G
|
VISHAY | 功能相似 | TO-220 |
MOSFET N-CH 900V 1.2A TO220FP
|
||
IRFIBF20G
|
International Rectifier | 功能相似 |
MOSFET N-CH 900V 1.2A TO220FP
|
|||
IRFIBF20G
|
Vishay Intertechnology | 功能相似 | TO-220 |
MOSFET N-CH 900V 1.2A TO220FP
|
||
IRFIBF20G
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
MOSFET N-CH 900V 1.2A TO220FP
|
||
IRFIBF20G
|
IRF | 功能相似 | TO-220-3 |
MOSFET N-CH 900V 1.2A TO220FP
|
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