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Model IRFIBF20G
Description 900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagey
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Brand: International Rectifier
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Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4487) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 900 V

Technical parameters/rated current: 1.20 A

Technical parameters/drain source voltage (Vds): 900 V

Technical parameters/Continuous drain current (Ids): 1.20 A

Technical parameters/rise time: 21.0 ns

Encapsulation parameters/installation method: Through Hole

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP3NK90ZFP STP3NK90ZFP ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP3NK90ZFP 功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V
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