Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 30 W |
|
Technical parameters/drain source voltage (Vds): | 900 V |
|
Technical parameters/Continuous drain current (Ids): | 1.2A |
|
Technical parameters/rise time: | 21 ns |
|
Technical parameters/Input capacitance (Ciss): | 490pF @25V(Vds) |
|
Technical parameters/descent time: | 32 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 30000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-220 |
|
Dimensions/Packaging: | TO-220 |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP3NK90ZFP
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP3NK90ZFP 功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review