Technical parameters/number of channels: 1
Technical parameters/dissipated power: 1W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Input capacitance (Ciss): 200pF @25V(Vds)
Technical parameters/dissipated power (Max): 1W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: HVMDIP-4
External dimensions/packaging: HVMDIP-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD113
|
GE | 功能相似 |
N沟道 60V 800mA
|
|||
IRFD113
|
International Rectifier | 功能相似 | DIP-4 |
N沟道 60V 800mA
|
||
IRFD113
|
Vishay Siliconix | 功能相似 | HVMDIP-4 |
N沟道 60V 800mA
|
||
IRFD113
|
VISHAY | 功能相似 | DIP-4 |
N沟道 60V 800mA
|
||
IRFD113PBF
|
International Rectifier | 完全替代 |
MOSFET N-CH 60V 800mA 4-DIP
|
|||
IRFD113PBF
|
Vishay Semiconductor | 完全替代 | DIP |
MOSFET N-CH 60V 800mA 4-DIP
|
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