Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Other/Product Lifecycle: Unknown
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD113
|
GE | 功能相似 |
N沟道 60V 800mA
|
|||
IRFD113
|
International Rectifier | 功能相似 | DIP-4 |
N沟道 60V 800mA
|
||
IRFD113
|
Vishay Siliconix | 功能相似 | HVMDIP-4 |
N沟道 60V 800mA
|
||
IRFD113
|
VISHAY | 功能相似 | DIP-4 |
N沟道 60V 800mA
|
||
IRFD113PBF
|
International Rectifier | 完全替代 |
MOSFET N-CH 60V 800mA 4-DIP
|
|||
IRFD113PBF
|
Vishay Semiconductor | 完全替代 | DIP |
MOSFET N-CH 60V 800mA 4-DIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review