Technical parameters/dissipated power: 1000 mW
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 135pF @25V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: DIP
External dimensions/height: 3.37 mm
External dimensions/packaging: DIP
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD113
|
GE | 完全替代 |
MOSFET N-CH 60V 800mA 4-DIP
|
|||
IRFD113
|
International Rectifier | 完全替代 | DIP-4 |
MOSFET N-CH 60V 800mA 4-DIP
|
||
IRFD113
|
Vishay Siliconix | 完全替代 | HVMDIP-4 |
MOSFET N-CH 60V 800mA 4-DIP
|
||
IRFD113
|
VISHAY | 完全替代 | DIP-4 |
MOSFET N-CH 60V 800mA 4-DIP
|
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