Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 125 W
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/Continuous drain current (Ids): 3.1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 |
PowerMOS transistor
|
|||
IRFBG30
|
IRF | 功能相似 |
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
|
|||
IRFBG30
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
|
||
IRFBG30
|
VISHAY | 功能相似 | TO-220 |
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
|
||
IRFBG30
|
International Rectifier | 功能相似 |
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
|
|||
IRFBG30PBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 1000V 3.1A TO-220AB
|
||
IRFBG30PBF
|
International Rectifier | 类似代替 | TO-220 |
MOSFET N-CH 1000V 3.1A TO-220AB
|
||
IRFBG30PBF
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 1000V 3.1A TO-220AB
|
||
|
IRFBG30PBF
|
Vishay Intertechnology | 类似代替 | TO-220 |
MOSFET N-CH 1000V 3.1A TO-220AB
|
||
STP3NK100Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP3NK100Z 功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review