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Model IRFBG30

Description Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...

Brand: Vishay Siliconix

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	1.00 kV
Technical parameters/rated current:	3.10 A
Technical parameters/drain source resistance:	5.00 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	125W (Tc)
Technical parameters/drain source voltage (Vds):	1000 V
Technical parameters/Leakage source breakdown voltage:	1.00kV (min)
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	3.10 A
Technical parameters/rise time:	25.0 ns
Technical parameters/Input capacitance (Ciss):	980pF @25V(Vds)
Technical parameters/dissipated power (Max):	125W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Contains Lead

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