Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 3.10 A
Technical parameters/rated power: 125 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 980pF @25V
Technical parameters/drain source voltage (Vds): 1 kV
Technical parameters/leakage source breakdown voltage: 1000 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.10 A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 980pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 125 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.01 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Box
Other/Manufacturing Applications: Audio, Industrial, Audio, Industrial, Signal Processing, Signal Processing
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 功能相似 |
PowerMOS transistor
|
|||
IRFBG30
|
IRF | 类似代替 |
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
|
|||
IRFBG30
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
|
||
IRFBG30
|
VISHAY | 类似代替 | TO-220 |
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
|
||
IRFBG30
|
International Rectifier | 类似代替 |
Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1kV 3.1A 3Pin(3+Tab) TO-220AB Trans MOSFET N-CH 1...
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review