Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Input capacitance (Ciss): 200pF @25V(Vds)
Technical parameters/rated power (Max): 1.3 W
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
LiteOn | 类似代替 | HEXPDIP |
MOSFET P-CH 100V 0.7A 4-DIP
|
||
IRFD9110PBF
|
Vishay Siliconix | 类似代替 | DIP-4 |
MOSFET P-CH 100V 0.7A 4-DIP
|
||
IRFD9110PBF
|
Vishay Precision Group | 类似代替 |
MOSFET P-CH 100V 0.7A 4-DIP
|
|||
IRFD9110PBF
|
International Rectifier | 类似代替 | HVMDIP-4 |
MOSFET P-CH 100V 0.7A 4-DIP
|
||
IRFD9110PBF
|
VISHAY | 类似代替 | DIP-4 |
MOSFET P-CH 100V 0.7A 4-DIP
|
||
IRFD9110PBF
|
Vishay Intertechnology | 类似代替 |
MOSFET P-CH 100V 0.7A 4-DIP
|
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