Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/dissipated power: 1.3 W
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
External dimensions/length: 6.29 mm
Physical parameters/operating temperature: -55℃ ~ 175℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9110
|
Intersil | 类似代替 | DIP |
MOSFET P-CH 100V 0.7A 4-DIP
|
||
IRFD9110
|
Harris | 类似代替 | DIP-4 |
MOSFET P-CH 100V 0.7A 4-DIP
|
||
IRFD9110
|
IRF | 类似代替 |
MOSFET P-CH 100V 0.7A 4-DIP
|
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