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Model IRFD9110PBF
Description MOSFET P-CH 100V 0.7A 4-DIP
Product QR code
Brand: Vishay Siliconix
Packaging DIP-4
Delivery time
Packaging method Tube
Standard packaging quantity 1
5.67  yuan 5.67yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7222) Minimum order quantity(1)
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Technical parameters/dissipated power:

1300 mW

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/rise time:

27 ns

 

Technical parameters/Input capacitance (Ciss):

200pF @25V(Vds)

 

Technical parameters/descent time:

17 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

1.3W (Ta)

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

DIP-4

 

Dimensions/Packaging:

DIP-4

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFD9110 IRFD9110 Intersil 类似代替 DIP
MOSFET P-CH 100V 0.7A 4-DIP
IRFD9110 IRFD9110 Harris 类似代替 DIP-4
MOSFET P-CH 100V 0.7A 4-DIP
PDF
IRFD9110 IRFD9110 IRF 类似代替
MOSFET P-CH 100V 0.7A 4-DIP
PDF

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