Technical parameters/number of channels: 1
Technical parameters/dissipated power: 125W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.41 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Intersil | 功能相似 | TO-220 |
Trans MOSFET N-CH 600V 6.2A 3Pin TO-220AB
|
||
IRFBC40
|
Vishay Siliconix | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 600V 6.2A 3Pin TO-220AB
|
||
IRFBC40
|
ST Microelectronics | 功能相似 | TO-220 |
Trans MOSFET N-CH 600V 6.2A 3Pin TO-220AB
|
||
IRFBC40
|
Fairchild | 功能相似 |
Trans MOSFET N-CH 600V 6.2A 3Pin TO-220AB
|
|||
IRFBC40
|
Vishay Semiconductor | 功能相似 | TO-220-3 |
Trans MOSFET N-CH 600V 6.2A 3Pin TO-220AB
|
||
IRFBC40LC
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 600V 6.2A TO-220AB
|
||
IRFBC40LC
|
Vishay Semiconductor | 类似代替 |
MOSFET N-CH 600V 6.2A TO-220AB
|
|||
IRFBC40LCPBF
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
|||
IRFBC40LCPBF
|
Infineon | 功能相似 |
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
|||
IRFBC40LCPBF
|
VISHAY | 功能相似 | TO-220-3 |
Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
|
||
IRFBC40PBF
|
International Rectifier | 类似代替 | TO-220 |
Trans MOSFET N-CH 600V 6.2A 3Pin(3+Tab) TO-220AB
|
||
IRFBC40PBF
|
Vishay Semiconductor | 类似代替 | TO-220 |
Trans MOSFET N-CH 600V 6.2A 3Pin(3+Tab) TO-220AB
|
||
IRFBC40PBF
|
Vishay Precision Group | 类似代替 | TO-220 |
Trans MOSFET N-CH 600V 6.2A 3Pin(3+Tab) TO-220AB
|
||
IRFBC40PBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
Trans MOSFET N-CH 600V 6.2A 3Pin(3+Tab) TO-220AB
|
||
STP5NK60Z
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP5NK60Z 功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.2 ohm, 10 V, 3.75 V
|
||
STP6N62K3
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP6N62K3 功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
|
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