Technical parameters/dissipated power: 125000 mW
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Intersil | 类似代替 | TO-220 |
MOSFET N-CH 600V 6.2A TO-220AB
|
||
IRFBC40
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 600V 6.2A TO-220AB
|
||
IRFBC40
|
ST Microelectronics | 类似代替 | TO-220 |
MOSFET N-CH 600V 6.2A TO-220AB
|
||
IRFBC40
|
Fairchild | 类似代替 |
MOSFET N-CH 600V 6.2A TO-220AB
|
|||
IRFBC40
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 600V 6.2A TO-220AB
|
||
MTP6N60E
|
Motorola | 功能相似 |
TO-220 N-CH 600V 6A
|
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