Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 6.20 A
Technical parameters/rise time: 23 ns
Technical parameters/descent time: 18 ns
Technical parameters/operating temperature (Max): 150 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBC40AS
|
International Rectifier | 完全替代 | Surface Mount |
MOSFET N-CH 600V 6.2A D2PAK
|
||
IRFBC40AS
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 600V 6.2A D2PAK
|
||
IRFBC40AS
|
VISHAY | 完全替代 | D2PAK-263 |
MOSFET N-CH 600V 6.2A D2PAK
|
||
IRFBC40AS
|
IRF | 完全替代 |
MOSFET N-CH 600V 6.2A D2PAK
|
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