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Model IRFBC40AS
Description MOSFET N-CH 600V 6.2A D2PAK
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Brand: Vishay Siliconix
Packaging TO-263-3
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Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6005) Minimum order quantity(1)
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Technical parameters/dissipated power: 125W (Tc)

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/Input capacitance (Ciss): 1036pF @25V(Vds)

Technical parameters/dissipated power (Max): 125W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

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IRFBC40ASPBF IRFBC40ASPBF Vishay Precision Group 完全替代 D2PAK
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IRFBC40ASTRRPBF IRFBC40ASTRRPBF Vishay Siliconix 完全替代 TO-263-3
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STB4NK60ZT4 STB4NK60ZT4 ST Microelectronics 功能相似 TO-263-3
STMICROELECTRONICS STB4NK60ZT4 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
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