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Model IRFBC40ASPBF
Description MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 1.2Ω; ID 6.2A; D2Pak; PD 125W; VGS +/-30V
Product QR code
Brand: Vishay Precision Group
Packaging D2PAK
Delivery time
Packaging method
Standard packaging quantity 1
21.92  yuan 21.92yuan
5+:
$ 25.6417
50+:
$ 24.5459
200+:
$ 23.9323
500+:
$ 23.7789
1000+:
$ 23.6254
2500+:
$ 23.4501
5000+:
$ 23.3405
7500+:
$ 23.2310
Quantity
5+
50+
200+
500+
1000+
Price
$25.6417
$24.5459
$23.9323
$23.7789
$23.6254
Price $ 25.6417 $ 24.5459 $ 23.9323 $ 23.7789 $ 23.6254
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9749) Minimum order quantity(5)
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Technical parameters/drain source resistance: 1.2 Ω

Technical parameters/dissipated power: 125 W

Technical parameters/input capacitance: 1036pF @25V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: D2PAK

External dimensions/length: 10.67 mm

External dimensions/packaging: D2PAK

Physical parameters/operating temperature: -55℃ ~ 150℃

Compliant with standards/RoHS standards: RoHS Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STB4NK60ZT4 STB4NK60ZT4 ST Microelectronics 功能相似 TO-263-3
STMICROELECTRONICS STB4NK60ZT4 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
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