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Model IRFBC40AS
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagem
Product QR code
Brand: International Rectifier
Packaging Surface Mount
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6781) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

600 V

 

Technical parameters/rated current:

6.20 A

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

125 W

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/Continuous drain current (Ids):

6.20 A

 

Technical parameters/rise time:

23.0 ns

 

Encapsulation parameters/installation method:

Surface Mount

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFBC40ASPBF IRFBC40ASPBF Vishay Precision Group 完全替代 D2PAK
MOSFET N-CH 600V 6.2A D2PAK
IRFBC40ASPBF IRFBC40ASPBF VISHAY 完全替代 TO-263-3
MOSFET N-CH 600V 6.2A D2PAK
PDF
IRFBC40ASPBF IRFBC40ASPBF LiteOn 完全替代 TO-252-3
MOSFET N-CH 600V 6.2A D2PAK
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IRFBC40ASTRLPBF IRFBC40ASTRLPBF Vishay Semiconductor 完全替代 TO-263
MOSFET N-CH 600V 6.2A D2PAK
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IRFBC40ASTRRPBF IRFBC40ASTRRPBF Vishay Siliconix 完全替代 TO-263-3
MOSFET N-CH 600V 6.2A D2PAK
PDF
STB4NK60ZT4 STB4NK60ZT4 ST Microelectronics 功能相似 TO-263-3
STMICROELECTRONICS STB4NK60ZT4 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
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