Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 9.20 A
Technical parameters/rated power: 170 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.75 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 170 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 1400pF @25V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 9.20 A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 170 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/width: 4.7 mm
External dimensions/height: 15.49 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDP10N60NZ
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ON Semiconductor | 功能相似 | TO-220 |
UniFET™ N 通道 MOSFET，Fairchild Semiconductor UniFET™ MOSFET 是 Fairchild Semiconductor 的高电压 MOSFET 系列。 它平面 MOSFET 中具有最小通态电阻，还提供卓越的切换性能和较高雪崩能量强度。 此外，内部栅极-源极 ESD 二极管让 UniFET-II™ MOSFET 可以耐受超过 2000V HBM 浪涌应力。 UniFET™ MOSFET 适用于开关电源转换器应用，如功率因数校正 (PFC)、平板显示屏 (FPD) 电视电源、ATX（先进技术扩展）和电子灯镇流器。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
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Rochester | 功能相似 | TO-220 |
600V N沟道MOSFET 600V N-Channel MOSFET
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IRFB9N60A
|
Vishay Semiconductor | 功能相似 | Through Hole |
MOSFET N-CH 600V 9.2A TO-220AB
|
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IRFB9N60A
|
International Rectifier | 功能相似 |
MOSFET N-CH 600V 9.2A TO-220AB
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IRFB9N60A
|
Vishay Siliconix | 功能相似 | TO-220-3 |
MOSFET N-CH 600V 9.2A TO-220AB
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IRFB9N60APBF
|
LiteOn | 功能相似 | TO-220-3 |
MOSFET N-CH 600V 9.2A TO-220AB
|
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IRFB9N60APBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
MOSFET N-CH 600V 9.2A TO-220AB
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IRFB9N60APBF
|
Vishay Precision Group | 功能相似 | TO-220 |
MOSFET N-CH 600V 9.2A TO-220AB
|
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IRFB9N60APBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
MOSFET N-CH 600V 9.2A TO-220AB
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