Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.64 Ω
Technical parameters/dissipated power: 185 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/rise time: 50 ns
Technical parameters/Input capacitance (Ciss): 1110pF @25V(Vds)
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 185 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.36 mm
External dimensions/width: 4.9 mm
External dimensions/height: 16.07 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Other/Manufacturing Applications: Power management, industrial, consumer electronics, communication and networking, lighting
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFB9N60APBF
|
LiteOn | 功能相似 | TO-220-3 |
VISHAY IRFB9N60APBF. 功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
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IRFB9N60APBF
|
Vishay Semiconductor | 功能相似 | TO-220 |
VISHAY IRFB9N60APBF. 功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
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IRFB9N60APBF
|
Vishay Precision Group | 功能相似 | TO-220 |
VISHAY IRFB9N60APBF. 功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
|
||
IRFB9N60APBF
|
Vishay Intertechnology | 功能相似 | TO-220 |
VISHAY IRFB9N60APBF. 功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
|
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