Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.28 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 60 W
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/leakage source breakdown voltage: -60.0 V
Technical parameters/Continuous drain current (Ids): 11.0 A, -11.0 A
Technical parameters/Input capacitance (Ciss): 570pF @25V(Vds)
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3700 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z24S
|
VISHAY | 完全替代 | D2PAK |
MOSFET P-CH 60V 11A D2PAK
|
||
IRF9Z24SPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
MOSFET P-CH 60V 11A D2PAK
|
||
IRF9Z24SPBF
|
Vishay Dale | 功能相似 |
MOSFET P-CH 60V 11A D2PAK
|
|||
IRF9Z24SPBF
|
Vishay Intertechnology | 功能相似 |
MOSFET P-CH 60V 11A D2PAK
|
|||
IRF9Z24STRLPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
Trans MOSFET P-CH Si 60V 11A 3Pin(2+Tab) D2PAK T/R
|
||
IRF9Z24STRRPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET P-CH 60V 11A D2PAK
|
||
IRF9Z24STRRPBF
|
Vishay Intertechnology | 完全替代 | TO-252-3 |
MOSFET P-CH 60V 11A D2PAK
|
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