Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z24SPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
||
IRF9Z24SPBF
|
Vishay Dale | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
|||
IRF9Z24SPBF
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
|||
IRF9Z24STRLPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
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