Technical parameters/drain source resistance: 0.28 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 3.7 W
Technical parameters/drain source voltage (Vds): -60.0 V
Technical parameters/Continuous drain current (Ids): -11.0 A
Technical parameters/operating temperature (Max): 175 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z24SPBF
|
Vishay Semiconductor | 功能相似 | TO-263 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
||
IRF9Z24SPBF
|
Vishay Dale | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
|||
IRF9Z24SPBF
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
|||
IRF9Z24STRLPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 11A I(D), 60V, 0.28Ω, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
|
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