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Model IRF9388PBF
Description HEXFET® N Channel power MOSFET maximum 50A, Infineon HEXFET ® Power MOSFETs have various robust single N-channel devices used to provide AC to DC and DC to DC power for audio, consumer electronics, motor control, lighting, and household appliances. ###MOSFET transistor, Infineon (IR) Infineon's comprehensive and robust combination of single and dual N-channel and P-channel devices provides fast switching speed and can meet various power requirements. The application scope ranges from AC-DC and DC-DC power supplies to audio and consumer electronics products, from motor control to lighting and household appliances.
Product QR code
Brand: Infineon
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.87  yuan 1.87yuan
5+:
$ 2.5205
25+:
$ 2.3338
50+:
$ 2.2031
100+:
$ 2.1471
500+:
$ 2.1097
2500+:
$ 2.0630
5000+:
$ 2.0444
10000+:
$ 2.0164
Quantity
5+
25+
50+
100+
500+
Price
$2.5205
$2.3338
$2.2031
$2.1471
$2.1097
Price $ 2.5205 $ 2.3338 $ 2.2031 $ 2.1471 $ 2.1097
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4521) Minimum order quantity(5)
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Technical parameters/drain source resistance: 8.5 mΩ

Technical parameters/polarity: P-CH

Technical parameters/dissipated power: 2.5W (Ta)

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 12A

Technical parameters/Input capacitance (Ciss): 1680pF @25V(Vds)

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 2.5W (Ta)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SOIC-8

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 1.5 mm

External dimensions/packaging: SOIC-8

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tape & Reel (TR)

Other/Manufacturing Applications: Load Switch Low Side, Battery Protection, Load Switch High Side

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF9388TRPBF IRF9388TRPBF IFC 类似代替 8
INFINEON IRF9388TRPBF 晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V 新
IRF9388TRPBF IRF9388TRPBF Infineon 类似代替 SOIC-8
INFINEON IRF9388TRPBF 晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V 新
PDF
IRF9388TRPBF IRF9388TRPBF International Rectifier 类似代替 SOIC-8
INFINEON IRF9388TRPBF 晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V 新
PDF

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