Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF9388
Technical parameters/threshold voltage: 1.8 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1680pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9388PBF
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Infineon | 类似代替 | SOIC-8 |
HEXFET® N 通道功率 MOSFET 最大 50A,Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备,用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管,Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度,且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品,从电动机控制到照明和家用电器。
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SI4825DDY-T1-GE3
|
Vishay Semiconductor | 功能相似 | SOIC |
SI4825DDY-T1-GE3 编带
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SI4825DDY-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
SI4825DDY-T1-GE3 编带
|
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