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Model SI4825DDY-T1-GE3
Description VISHAY SI4825DDY-T1-GE3 晶体管, MOSFET, P沟道, -14.9 A, -30 V, 0.01 ohm, -10 V, -1.4 V
Product QR code
Brand: Vishay Semiconductor
Packaging SOIC
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.12  yuan 2.12yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1467) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.01 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

2.7 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC

 

Dimensions/Packaging:

SOIC

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

Power Management, Industrial

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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Alternative material

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IRF9388TRPBF IRF9388TRPBF International Rectifier 功能相似 SOIC-8
INFINEON IRF9388TRPBF 晶体管, MOSFET, P沟道, -12 A, -30 V, 0.0085 ohm, -20 V, -1.8 V 新
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