Technical parameters/drain source resistance: 0.55 Ω
Technical parameters/dissipated power: 125 W
Technical parameters/input capacitance: 1100pF @25V
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/length: 10.51 mm
External dimensions/packaging: TO-220
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF740
|
Magnatec | 功能相似 | TO-220 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
||
IRF740
|
Fairchild | 功能相似 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
|||
IRF740
|
ST Microelectronics | 功能相似 | TO-220-3 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
||
IRF740PBF
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 400V 10A TO-220AB
|
||
IRF740PBF
|
International Rectifier | 类似代替 | TO-220 |
MOSFET N-CH 400V 10A TO-220AB
|
||
IRF740PBF
|
VISHAY | 类似代替 | TO-220-3 |
MOSFET N-CH 400V 10A TO-220AB
|
||
IRF740PBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 400V 10A TO-220AB
|
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