Technical parameters/dissipated power: 125W (Tc)
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/rated power (Max): 125 W
Technical parameters/dissipated power (Max): 125W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF740
|
Magnatec | 功能相似 | TO-220 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
||
IRF740
|
Fairchild | 功能相似 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
|||
IRF740
|
ST Microelectronics | 功能相似 | TO-220-3 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
||
IRF740B
|
ON Semiconductor | 功能相似 | TO-220-3 |
400V N沟道MOSFET 400V N-Channel MOSFET
|
||
IRF740LCPBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 400V 10A TO-220AB
|
||
IRF740LCPBF
|
International Rectifier | 类似代替 |
MOSFET N-CH 400V 10A TO-220AB
|
|||
IRF740LCPBF
|
Vishay Precision Group | 类似代替 | TO-220 |
MOSFET N-CH 400V 10A TO-220AB
|
||
NTE2397
|
NTE Electronics | 功能相似 | TO-220 |
NTE ELECTRONICS NTE2397 场效应管, MOSFET, N沟道, 400V, 10A, TO-220
|
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