Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 10.0 A
Technical parameters/drain source resistance: 550 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 125 W
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF740
|
Magnatec | 功能相似 | TO-220 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
||
IRF740
|
Fairchild | 功能相似 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
|||
IRF740
|
ST Microelectronics | 功能相似 | TO-220-3 |
N - CHANNEL 400V - 0.48欧姆 - 10 A - TO- 220的PowerMESH ] MOSFET N - CHANNEL 400V - 0.48 ohm - 10 A - TO-220 PowerMESH] MOSFET
|
||
IRF740B
|
ON Semiconductor | 功能相似 | TO-220-3 |
400V N沟道MOSFET 400V N-Channel MOSFET
|
||
IRF740LCPBF
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 400V 10A TO-220AB
|
||
IRF740LCPBF
|
International Rectifier | 类似代替 |
MOSFET N-CH 400V 10A TO-220AB
|
|||
IRF740LCPBF
|
Vishay Precision Group | 类似代替 | TO-220 |
MOSFET N-CH 400V 10A TO-220AB
|
||
NTE2397
|
NTE Electronics | 功能相似 | TO-220 |
NTE ELECTRONICS NTE2397 场效应管, MOSFET, N沟道, 400V, 10A, TO-220
|
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