Technical parameters/drain source resistance: 1 Ω
Technical parameters/polarity: N
Technical parameters/dissipated power: 2 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/Continuous drain current (Ids): 5.5A
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Minimum Packaging: 50
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF730
|
ST Microelectronics | 功能相似 | TO-220-3 |
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
|
||
IRF730
|
CJ | 功能相似 | TO-220-3 |
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
|
||
IRF730
|
International Rectifier | 功能相似 | TO-220 |
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
|
||
IRF730
|
Advanced Power Electronics | 功能相似 | TO-220 |
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
|
||
MTP5N40E
|
Motorola | 功能相似 |
Trans MOSFET N-CH Si 400V 5A 3Pin(3+Tab) TO-220
|
|||
STP7NB40
|
ST Microelectronics | 类似代替 | TO-220-3 |
N - 沟道增强型MOSFET的PowerMESH N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review