Technical parameters/rated voltage (DC): 400 V
Technical parameters/rated current: 5.50 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 750 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 100 W
Technical parameters/drain source voltage (Vds): 400 V
Technical parameters/leakage source breakdown voltage: 400 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 5.50 A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 530pF @25V(Vds)
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 100W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.15 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF730
|
ST Microelectronics | 功能相似 | TO-220-3 |
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
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IRF730
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International Rectifier | 功能相似 | TO-220 |
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IRF730
|
Advanced Power Electronics | 功能相似 | TO-220 |
APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost
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MTP5N40E
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Motorola | 功能相似 |
Trans MOSFET N-CH Si 400V 5A 3Pin(3+Tab) TO-220
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|||
STP7NB40
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ST Microelectronics | 类似代替 | TO-220-3 |
N - 沟道增强型MOSFET的PowerMESH N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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