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Model STP7NB40
Description N - PowerMESH N - CHANNEL ENHANMENT MODE PowerMESH MOSFET with Channel Enhancement
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Brand: ST Microelectronics
Packaging TO-220-3
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Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8208) Minimum order quantity(1)
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Technical parameters/number of channels: 1

Technical parameters/drain source resistance: 750 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 100 W

Technical parameters/leakage source breakdown voltage: 400 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 7.00 A

Technical parameters/rise time: 7.5 ns

Technical parameters/descent time: 9 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 65 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220-3

External dimensions/length: 10.4 mm

External dimensions/width: 4.6 mm

External dimensions/height: 9.15 mm

External dimensions/packaging: TO-220-3

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

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