Technical parameters/rated power: 89 W
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8W (Ta), 89W (Tc)
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 30A
Technical parameters/Input capacitance (Ciss): 5640pF @15V(Vds)
Technical parameters/rated power (Max): 2.8 W
Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DIRECTFET™ MX
External dimensions/packaging: DIRECTFET™ MX
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
IRF | 功能相似 |
Direct-FET N-CH 30V 30A
|
|||
IRF6678
|
Infineon | 功能相似 | DirectFET-MX |
Direct-FET N-CH 30V 30A
|
||
IRF6678TR1PBF
|
Infineon | 功能相似 | DirectFET? Isometric MX |
Direct-FET N-CH 30V 30A
|
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