Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 30.0 A
Technical parameters/drain source resistance: 0.0017 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.8 mW
Technical parameters/product series: IRF6678
Technical parameters/threshold voltage: 1.35 V
Technical parameters/input capacitance: 5.64 nF
Technical parameters/gate charge: 65.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 24.0 A
Technical parameters/rise time: 71.0 ns
Technical parameters/Input capacitance (Ciss): 5640pF @15V(Vds)
Technical parameters/rated power (Max): 2.8 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 5
Encapsulation parameters/Encapsulation: DirectFET? Isometric MX
External dimensions/packaging: DirectFET? Isometric MX
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6678TRPBF
|
Infineon | 功能相似 | DIRECTFET™ MX |
Direct-FET N-CH 30V 30A
|
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