Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 3 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.8 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 30A
Technical parameters/rise time: 71 ns
Technical parameters/Input capacitance (Ciss): 5640pF @15V(Vds)
Technical parameters/rated power (Max): 2.8 W
Technical parameters/descent time: 8.1 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DirectFET-MX
External dimensions/length: 6.35 mm
External dimensions/width: 5.05 mm
External dimensions/height: 0.7 mm
External dimensions/packaging: DirectFET-MX
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF6678TR1
|
International Rectifier | 功能相似 | MT |
Direct-FET N-CH 30V 30A
|
||
IRF6678TR1
|
Infineon | 功能相似 | Direct-FET |
Direct-FET N-CH 30V 30A
|
||
IRF6678TRPBF
|
Infineon | 功能相似 | DIRECTFET™ MX |
Direct-FET N-CH 30V 30A
|
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