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Model IRF6678TR1
Description Direct-FET N-CH 30V 30A
Product QR code
Brand: Infineon
Packaging Direct-FET
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2742) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 30.0 V

Technical parameters/rated current: 30.0 A

Technical parameters/drain source resistance: 1.70 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 2.8W (Ta), 89W (Tc)

Technical parameters/product series: IRF6678

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/leakage source breakdown voltage: 30.0 V

Technical parameters/Continuous drain current (Ids): 30.0 A

Technical parameters/rise time: 71 ns

Technical parameters/Input capacitance (Ciss): 5640pF @15V(Vds)

Technical parameters/rated power (Max): 2.8 W

Technical parameters/descent time: 8.1 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/dissipated power (Max): 2.8W (Ta), 89W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 7

Encapsulation parameters/Encapsulation: Direct-FET

External dimensions/packaging: Direct-FET

Physical parameters/materials: Silicon

Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF6678 IRF6678 IRF 功能相似
Direct-FET N-CH 30V 30A
IRF6678 IRF6678 Infineon 功能相似 DirectFET-MX
Direct-FET N-CH 30V 30A
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