Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 3.3A
Technical parameters/rise time: 17 ns
Technical parameters/Input capacitance (Ciss): 140pF @25V(Vds)
Technical parameters/descent time: 8.9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: D2PAK-263
External dimensions/packaging: D2PAK-263
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF610SPBF
|
VISHAY | 完全替代 | TO-263-3 |
Trans MOSFET N-CH 200V 3.3A 3Pin(2+Tab) D2PAK
|
||
IRF610SPBF
|
International Rectifier | 完全替代 |
Trans MOSFET N-CH 200V 3.3A 3Pin(2+Tab) D2PAK
|
|||
IRF610SPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
Trans MOSFET N-CH 200V 3.3A 3Pin(2+Tab) D2PAK
|
||
IRF610SPBF
|
LiteOn | 完全替代 |
Trans MOSFET N-CH 200V 3.3A 3Pin(2+Tab) D2PAK
|
|||
IRF610STRLPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 3.3A D2PAK
|
||
IRF610STRRPBF
|
VISHAY | 完全替代 | TO-252-3 |
MOSFET N-CH 200V 3.3A D2PAK
|
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