Technical parameters/drain source resistance: 1.5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 3.30 A
Technical parameters/rise time: 17 ns
Technical parameters/Input capacitance (Ciss): 140pF @25V(Vds)
Technical parameters/rated power (Max): 3 W
Technical parameters/descent time: 8.9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3W (Ta), 36W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF610S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 3.3A D2PAK
|
||
IRF610S
|
VISHAY | 完全替代 | D2PAK-263 |
MOSFET N-CH 200V 3.3A D2PAK
|
||
IRF610S
|
Infineon | 完全替代 |
MOSFET N-CH 200V 3.3A D2PAK
|
|||
IRF610STRL
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 200V 3.3A D2PAK
|
|||
IRF610STRL
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 3.3A D2PAK
|
||
IRF610STRLPBF
|
VISHAY | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
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