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Model IRF610S
Description MOSFET N-CH 200V 3.3A D2PAK
Product QR code
Brand: Vishay Siliconix
Packaging TO-263-3
Delivery time
Packaging method
Standard packaging quantity 1
50.38  yuan 50.38yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9166) Minimum order quantity(1)
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Technical parameters/dissipated power:

3W (Ta), 36W (Tc)

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Input capacitance (Ciss):

140pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

3W (Ta), 36W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

10.67 mm

 

Dimensions/Width:

9.65 mm

 

Dimensions/Height:

4.83 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF610SPBF IRF610SPBF VISHAY 完全替代 TO-263-3
Trans MOSFET N-CH 200V 3.3A 3Pin(2+Tab) D2PAK
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IRF610SPBF IRF610SPBF International Rectifier 完全替代
Trans MOSFET N-CH 200V 3.3A 3Pin(2+Tab) D2PAK
PDF
IRF610SPBF IRF610SPBF Vishay Siliconix 完全替代 TO-263-3
Trans MOSFET N-CH 200V 3.3A 3Pin(2+Tab) D2PAK
PDF
IRF610SPBF IRF610SPBF LiteOn 完全替代
Trans MOSFET N-CH 200V 3.3A 3Pin(2+Tab) D2PAK
PDF
IRF610STRLPBF IRF610STRLPBF VISHAY 完全替代 TO-252-3
MOSFET N-CH 200V 3.3A D2PAK
PDF
IRF610STRRPBF IRF610STRRPBF VISHAY 完全替代 TO-252-3
MOSFET N-CH 200V 3.3A D2PAK

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