Technical parameters/rated voltage (DC): 200 V
Technical parameters/rated current: 3.30 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 36.0 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 3.30 A
Technical parameters/rise time: 17.0 ns
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF610S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 3.3A D2PAK
|
||
IRF610S
|
VISHAY | 完全替代 | D2PAK-263 |
MOSFET N-CH 200V 3.3A D2PAK
|
||
IRF610S
|
Infineon | 完全替代 |
MOSFET N-CH 200V 3.3A D2PAK
|
|||
IRF610STRL
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 200V 3.3A D2PAK
|
|||
IRF610STRL
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 200V 3.3A D2PAK
|
||
IRF610STRLPBF
|
VISHAY | 功能相似 | TO-252-3 |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
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