Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.25 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 28 W
Technical parameters/threshold voltage: 4.5 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 5.00 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 632pF @25V(Vds)
Technical parameters/rated power (Max): 30 W
Technical parameters/descent time: 14 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.63 mm
External dimensions/width: 4.9 mm
External dimensions/height: 16.12 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDPF5N50NZ
|
ON Semiconductor | 类似代替 | TO-220-3 |
FDPF5N50NZ 系列 500 V 1.5 Ohm 30 W N 沟道 Mosfet - TO-220F
|
||
NDD05N50ZT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
N 通道功率 MOSFET，100V 至 1700V，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
|
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