Technical parameters/dissipated power: | 30 W |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/rise time: | 22 ns |
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Technical parameters/Input capacitance (Ciss): | 330pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 30 W |
|
Technical parameters/descent time: | 21 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 30 W |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.16 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 15.87 mm |
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Dimensions/Packaging: | TO-220-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Rail, Tube |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDD05N50ZT4G
|
ON Semiconductor | 功能相似 | TO-252-3 |
N 通道功率 MOSFET,100V 至 1700V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
||
NDF05N50ZG
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR NDF05N50ZG 场效应管, MOSFET, N沟道, 500V 5A TO-220
|
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