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Model NDD05N50ZT4G

Description N Channel power MOSFET, 100V to 1700V, ON Semiconductor # # MOSFET transistor, ON Semiconductor

Brand: ON Semiconductor

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/drain source resistance:	1.25 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	83 W
Technical parameters/threshold voltage:	4.5 V
Technical parameters/drain source voltage (Vds):	500 V
Technical parameters/Continuous drain current (Ids):	4.70 A
Technical parameters/rise time:	15 ns
Technical parameters/Input capacitance (Ciss):	530pF @25V(Vds)
Technical parameters/rated power (Max):	83 W
Technical parameters/descent time:	14 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	83W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-252-3
Dimensions/Length:	6.73 mm
Dimensions/Width:	6.22 mm
Dimensions/Height:	2.38 mm
Dimensions/Packaging:	TO-252-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs Information/Hong Kong Import and Export License:	NLR

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