Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 28.4 A
Technical parameters/drain source resistance: 160 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 310 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/leakage source breakdown voltage: 500 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 28.4 A
Technical parameters/rise time: 290 ns
Technical parameters/Input capacitance (Ciss): 5600pF @25V(Vds)
Technical parameters/descent time: 175 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 310W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/length: 16.2 mm
External dimensions/width: 5 mm
External dimensions/height: 20.1 mm
External dimensions/packaging: TO-3-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA28N50
|
ON Semiconductor | 功能相似 | TO-3-3 |
500V N沟道MOSFET 500V N-Channel MOSFET
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FQA28N50
|
Fairchild | 功能相似 | TO-3-3 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
||
FQA28N50F
|
Freescale | 功能相似 |
500V N沟道MOSFET 500V N-Channel MOSFET
|
|||
STW28NM50N
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW28NM50N 晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
|
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