Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.135 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 150 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Continuous drain current (Ids): | 21A |
|
Technical parameters/rise time: | 19 ns |
|
Technical parameters/Input capacitance (Ciss): | 1735pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 150 W |
|
Technical parameters/descent time: | 52 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 150W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-247-3 |
|
Dimensions/Length: | 15.75 mm |
|
Dimensions/Width: | 5.15 mm |
|
Dimensions/Height: | 20.15 mm |
|
Dimensions/Packaging: | TO-247-3 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDA50N50
|
Freescale | 功能相似 | TO-3-3 |
FAIRCHILD SEMICONDUCTOR FDA50N50 晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V
|
||
FDA50N50
|
Fairchild | 功能相似 | TO-3-3 |
FAIRCHILD SEMICONDUCTOR FDA50N50 晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V
|
||
FDA50N50
|
NONE | 功能相似 |
FAIRCHILD SEMICONDUCTOR FDA50N50 晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V
|
|||
|
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Littelfuse | 功能相似 | 3 |
IXYS SEMICONDUCTOR IXFH44N50P 晶体管, MOSFET, 极性FET, N沟道, 44 A, 500 V, 140 mohm, 10 V, 5 V
|
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