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Model FQA28N50
Description FQA28N50 管装
Product QR code
Brand: ON Semiconductor
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
2.68  yuan 2.68yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3427) Minimum order quantity(1)
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Technical parameters/dissipated power:

310W (Tc)

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/rise time:

290 ns

 

Technical parameters/Input capacitance (Ciss):

5600pF @25V(Vds)

 

Technical parameters/descent time:

175 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

310W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3-3

 

Dimensions/Packaging:

TO-3-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQA28N50 FQA28N50 ON Semiconductor 功能相似 TO-3-3
500V N沟道MOSFET 500V N-Channel MOSFET
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500V N沟道MOSFET 500V N-Channel MOSFET
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FQA28N50F FQA28N50F Freescale 功能相似
500V N沟道MOSFET 500V N-Channel MOSFET
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STW28NM50N STW28NM50N ST Microelectronics 功能相似 TO-247-3
STMICROELECTRONICS STW28NM50N 晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
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