Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 44.0 A
Technical parameters/drain source resistance: 18.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 110W (Tc)
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 44.0 A
Technical parameters/Input capacitance (Ciss): 1480pF @25V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF76429P3
|
Intersil | 功能相似 |
44A ， 60V ， 0.025 Ohm的N通道，逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
|||
HUF76429P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
44A ， 60V ， 0.025 Ohm的N通道，逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76429P3
|
Fairchild | 功能相似 | TO-220-3 |
44A ， 60V ， 0.025 Ohm的N通道，逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76429P3_NL
|
Fairchild | 功能相似 | TO-220 |
TO-220AB N-CH 60V 47A
|
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