Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 47A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HUF76429P3
|
Intersil | 功能相似 |
44A , 60V , 0.025 Ohm的N通道,逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
|||
HUF76429P3
|
ON Semiconductor | 功能相似 | TO-220-3 |
44A , 60V , 0.025 Ohm的N通道,逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
||
HUF76429P3
|
Fairchild | 功能相似 | TO-220-3 |
44A , 60V , 0.025 Ohm的N通道,逻辑电平UltraFET功率MOSFET 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review